English to French Tech/Engineering Patents (in a patent) HIGH VOLTAGE SILICON CARBIDE MOS-BIPOLAR DEVICES HAVING BI-DIRECTIONAL BLOCKING CAPABILITIES AND METHODS OF FABRICATING THE SAME

A high voltage silicon carbide, SiC, device, comprising:
a SiC insulated gate bipolar transistor, IGBT, comprising a voltage blocking SiC substrate (10) as a drift region of the IGBT;
a planar edge termination structure of a first conductivity type at a first surface (10B) of the voltage blocking substrate and surrounding an active region of the IGBT; and
a beveled edge termination structure extending through a second surface (10A) of the voltage blocking substrate opposite the first surface of the voltage blocking substrate, wherein the voltage blocking substrate (10) is a boule grown substrate; and

Boule grown substrates are discussed in commonly assigned United States Patent publication no. 2005/082542, filed October 16, 2003, entitled Methods of Forming Power Semiconductor Devices using Boule-Grown Silicon Carbide Drift Layers and Power Semiconductor Devices Formed Thereby.