English to French Tech/Engineering Patents (in a patent) plasma CVD device

The ionized gas is fed onto substrate 203 while CVD source gases are fed onto substrate 203 through source gas nozzle 205, so that the CVD gases are resolved to deposit a thin film on substrate 203.

a gas feeding step to resolve the gas introduced through the plasma from the gas nozzle (204) and feed a radical generated onto the substrate (203);