'power discretes' Google -->

This is what they look like:

https://tinyurl.com/sbas7xdv

Als je dan naar bijvoorbeeld die MOSFETs kijkt, kom je uit op: metal-oxide-semiconductor field-effect transistor is een bepaald type veldeffecttransistor (FET).

https://nl.wikipedia.org/wiki/MOSFET

Een veldeffecttransistor, meestal aangeduid als FET (field-effect transistor), is een unipolaire transistor met gewoonlijk drie aansluitingen: de source (S), de drain (D) en de gate (G). Bij een MOSFET is er nog een vierde aansluiting, het substraat (B van bulk), die meestal niet naar buiten uitgevoerd is, maar intern verbonden met de source. Speciale typen zoals de "dual gate"-MOSFET met twee gates, hebben extra aansluitingen.

https://nl.wikipedia.org/wiki/Veldeffecttransistor

Als dan naar een plaatje van een veldeffecttransistor zoekt, vind je weer een gelijksoortige afbeelding (iets naar beneden scrollen), een geval met drie pennetjes:

https://tinyurl.com/4ju6k8p2

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As an alternative to traditional silicon MOSFETs, silicon carbide MOSFETs offer the advantages of higher blocking voltage, lower on-state resistance, and higher thermal conductivity. The devices can replace silicon MOSFETs and IGBTs in many applications.

https://www.powerelectronics.com/technologies/discrete-power...

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Enhancement-mode Gallium Nitride (eGaN®) FETs from EPC have been in production for more than ten (10) years, and the 5th generation devices are half the size of their 4th generation predecessors, are twice as fast, and are priced comparably with MOSFETs. The early success of GaN-based power transistors and integrated circuits initially came from the speed advantage of GaN compared with silicon. GaN-on-Si transistors switch about 10 times faster than MOSFETs and 100 times faster than IGBTs.

https://www.powerelectronicsnews.com/silicon-discrete-power-...

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Onderstaande info lijkt nog wat specifieker te zijn:

Technology for optimizing power generation, transmission, and consumption


With the introduction of gallium nitride, Infineon is currently the only company in the market offering a full-spectrum portfolio of all power technologies – silicon (Si), silicon carbide (SiC) and GaN. We deliver solutions from microamps to megawatts with superior energy efficiency, offering highly reliable IGBTs, power MOSFETs, GaN e-mode HEMTs, power discretes, protected switches, Si drivers, GaN drivers, IGBT modules, intelligent power modules (IPMs), linear regulators, motor control solutions, LED drivers, and all forms of AC-DC, DC-DC, and digital power conversion.

https://www.infineon.com/cms/en/product/power/

Als je in de bovenstaande onderstreepte lijst op 'power discretes' klikt, kom je op:

IGBT Discretes

IGBT Discrete market leadership through groundbreaking innovation and application focus
Striving for the highest standards in performance and quality, Infineon offers a comprehensive discrete IGBT portfolio that is second to none. New products are application-specific developed to achieve the highest value.

From 600V up to 1600V, we offer a wide range of IGBT voltage classes to meet different voltage requirements in each application. Our discrete IGBT package portfolio contains SMD (Surface Mount Device) packages, for example, D²PAK, DPAK, SOT-223, and through-hole packages, for example, TO220, TO220FP, TO247, TO247-4, TO247PLUS, TO-247PLUS-4 and TO247 Advanced Isolation packages.

We provide discrete IGBTs solutions with and without anti-parallel diode, which is an excellent fit to use in industrial, home appliance and automotive applications.

https://www.infineon.com/cms/en/product/power/igbt/igbt-disc...

What is IGBT?

An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch, which, as it was developed, came to combine high efficiency and fast switching. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure.

Although the structure of the IGBT is topologically the same as a thyristor with a "MOS" gate (MOS-gate thyristor), the thyristor action is completely suppressed, and only the transistor action is permitted in the entire device operation range. It is used in switching power supplies in high-power applications: variable-frequency drives (VFDs), electric cars, trains, variable-speed refrigerators, lamp ballasts, arc-welding machines, and air conditioners.

Since it is designed to turn on and off rapidly, the IGBT can synthesize complex waveforms with pulse-width modulation and low-pass filters, so it is also used in switching amplifiers in sound systems and industrial control systems. In switching applications modern devices feature pulse repetition rates well into the ultrasonic-range frequencies, which are at least ten times higher than audio frequencies handled by the device when used as an analog audio amplifier. As of 2010, the IGBT is the second most widely used power transistor, after the power MOSFET.

What is this 'discrete' about?

The first experimental demonstration of a practical discrete vertical IGBT device was reported by Baliga at the IEEE International Electron Devices Meeting (IEDM) that year.[19][7] General Electric commercialized Baliga's IGBT device the same year.

The penalty isn't overly severe because at higher voltages, where IGBT usage dominates, discrete diodes have a significantly higher performance than the body diode of a MOSFET.

"Advances in Discrete Semiconductors March On". Power Electronics Technology. -->

Advances in Discrete Semiconductors March On:
--> The past three decades have heralded the introduction of MOSFETs, IGBTs, silicon, Schottky and silicon-carbide Schottky diodes, as well as continuing advances in high-voltage rectifiers.

https://www.powerelectronics.com/content/article/21852761/ad...

https://en.wikipedia.org/wiki/Insulated-gate_bipolar_transis...

Een insulated-gate bipolar transistor (IGBT) is een transistor die veel vermogen kan schakelen. De benodigde gate stuurspanning ligt wat hoger dan bij een MOSFET, in de orde van 15 volt. De stuurstromen kunnen aanzienlijk zijn, in de orde van enkele ampères, tijdens het opladen van de gate-capaciteit (enkele tientallen nF voor IGBT's die honderden ampères kunnen geleiden) bij het inschakelen van de IGBT. Bij het afschakelen treden evengrote stromen op.

Dit type transistor combineert de gatekarakteristiek van een MOSFET-transistor met de mogelijkheid van grote stromen en lage verzadigingsspanning van een bipolaire transistor door een n-kanaal-MOSFET en een bipolaire pnp-transistor op één chip te integreren. Vrijwel altijd wordt een snelle antiparallel diode in dezelfde behuizing geplaatst.

https://nl.wikipedia.org/wiki/Insulated-gate_bipolar_transis...

Your guide to discrete semiconductors

Many types of semiconductors are sold as part of circuits, oftentimes on an IC. These circuits are usually capable of carrying out any of a number of different functions in a device, which differentiates them substantially from discrete semiconductors.

A discrete semiconductor has a basic function that cannot be divided up into other functions. An IC, for example, may have a transistor, a diode and other components on it that can all perform different functions on their own or, working in conjunction as a circuit, can perform several functions together. A discrete semiconductor, conversely, can only perform one function. A transistor, for instance, is always a transistor and can only perform the functions associated with a transistor.

What types of discrete semiconductors exist? including images

Discrete semiconductors are very basic parts of electrical engineering and there are numerous different types. These semiconductors are inexpensive in most cases.

BJT & Bipolar Transistors

Bipolar Transistors: These devices are frequently incorporated into analog circuits. They are termed bipolar because they have carriers that utilize both negative and positive charges. In semiconductors, this means that they have both electrons and holes involved in their operation. Bipolar Transistors are used in integrated circuits quite heavily, but they are also sold as discrete units by most retailers.

Bridge Rectifiers

Bridge Rectifiers: A bridge rectifier is built out of diodes that are arranged in a specific configuration: the namesake bridge. This bridge is able to convert an input of alternating current into direct current, a basic function for most electronic devices. These devices work with a two-wire AC input, have two diode drops in their design and offer full-wave rectification.

Because these are discrete devices, some of them need to be purchased along with other devices to achieve the desired functionality for which they are intended in any given circuit. Semiconductor devices perform functions ranging from regulating power to working as switches and much more. For some engineering needs, the ability to purchase discrete semiconductors makes prototyping and production affordable.

Constant Current Diodes

Constant Current Diodes: Constant current diodes are differentiated from others by the fact that they regulate current rather than voltage. The current passing through these diodes reaches a specific limit and then is kept at that level by the diode. These are known by several different names, including current-regulating diodes (CRD), current-limiting diodes (CLD) and diode-connected transistors.

Darlington Pairs

Darlington Transistors: Darlington TransistorDarlington transistors are essentially two transistors in one. They both function to amplify the current they receive. The first transistor amplifies the current to a specific level and the second amplifies it even more. These parts are oftentimes used for space reasons, given that aDarlington transistor takes up less space on a board than would two transistors that were connected as discrete units. These are discrete components that actually take the place of two other discrete components.

DIACs

DIACs: DIACs are most often employed as triggers for thyristors. They are also used for triggering TRIACs. These are thyristors themselves, being differentiated from most by the absence of a gate electrode.

Digital Transistors

Digital Transistors: A digital transistor has only two possible states in a circuit. It can operate as fully on, which is called saturation, or can operate as fully off, which is called cut off.

Double Triode Valves

Double Triode Valves: Double triode valves are a type of vacuum tube that is associated with radio receivers. These valves include a triode that provides amplification. The two diodes included in the design are used for a rectifier, in one instance, and as a detector, in the case of the other diode.

Emitter-Switched Bipolar Transistors

Emitter-Switched Bipolar Transistors: An emitter switched bipolar transistor is actually two transistors in one. The design allows the component to block large voltages and to function at a very high speed.

Firing Circuit Commander Modules

Firing Circuit Commander Modules: Firing circuit commander modules provide phase control in circuitry. They are generally rated by the number of amps that they can handle.

HEMT Transistors

HEMT Transistors: These are commonly incorporated into electronic devices such as cellular phones, radar equipment and other equipment that needs to function at a very high speed. HEMT transistors are faster than regular transistors. They are field effect transistors that function due to a combination of different materials used in the manufacture.

IGBT Modules

IGBT Transistor Modules: IGBT transistor modules are easily incorporated into a circuit and allow the inclusion of the fast switching capabilities of IGBT transistors in devices. These are very high-efficiency devices that are also responsible for much of the miniaturization of electronic devices that has been possible over past decades.

JFETs

JFET Transistors: JFET stands for junction gate field effect transistor. They are frequently used in switching applications, though they can also be utilized to provide resistance that is dependent upon voltage. They have source and drain terminals and can either add resistance to electric current or, if they are utilized in a different fashion, cut off electric current altogether

MOSFETs

MOSFET Transistors: MOSFET transistors are the most common transistor in use. Their usage spans both analog and digital circuitry. These are field effect transistors that are provided with four terminals, thought three terminals are most commonly hooked up. In many cases, two of the terminals are short-circuited within the device. This arrangement, in fact, is so common that these devices appear with three terminals in electrical diagrams. The devices include body, drain, gate and source terminals in their designs.

Main Product

Pentode Valves: Just as the name implies, a pentode valve has five electrodes incorporated into its design. Most of these devices are vacuum tube designs, which have three amplification grids. The design is a very old one, having been first developed in the 1920s. Today, these devices are frequently utilized in industrial settings where high power is a factor.

PIN Diodes

PIN Diodes: PIN diodes are frequently found in high-voltage applications and in applications were fast switching is required. These are differentiated from other diodes by having an intrinsic semiconductor layer sandwiched between a p-type and n-type semiconductor layer.

Rectifier Diodes & Schottky Diodes

Rectifier & Schottky Diodes: Schottky diodes are characterized by being capable of very fast switching and having a low forward voltage drop. These diodes have much in common with cat's whiskers detectors and, in fact, those devices can be considered to be early versions of these types of diodes. The low voltage drop characteristic of these diodes is what enables them to be utilized in very fast switching applications.

SIDACs

SIDACs: A SIDAC is similar to a DIAC, but is capable of handling higher currents and has a higher breakover voltage. The acronym stands for Silicone Diode for Alternating Current. It is a type of thyristor. When the voltage applied to these devices reaches or goes beyond the break overvoltage, the nonconducting nature of the device changes and it becomes conductive. When the current applied to the device falls below the holding current, it returns to a nonconductive state.

Switching Diodes

Switching Diodes: Switching diodes have a high electrical resistance when the voltage applied to them is below the voltage for which they are specified. When the voltage is increased to a level above the specified voltage, the resistance drops. This allows them to function as a switch.

Thyristor Modules

Thyristor Modules: Thyristor modules are the same devices as silicon controlled rectifiers. These devices function as a switch. When the gate on the device receives a current pulse, it switches to and on condition. It will remain in the on condition until the voltage is reversed. These devices consist of four layers of semiconductor material, with alternating layers of p- and n-type semiconductors within them.

Thyristor Power Controllers

Thyristor Power Controller Assemblies: Thyristor power controller assemblies are used as trigger controllers that can provide some protection for digital circuits. If the output voltage rises above a specified level, the thyristor can function to break the circuit, protecting components.

Thyristor Trigger Modules

Thyristor Trigger Modules: Thyristor trigger modules provide a means by which a thyristor is triggered, allowing them to be utilized for switching applications and for other applications. These can be chosen based on several different criteria, including whether they are designed to work with large currents or in highly inductive circuits.

Thyristors

Thyristors: Inside any thyristor are four layers of semiconducting material, which consist of alternating layers of n- and p-type semiconductors. These devices function as switches. When a specific amount of current is reached, the device will start conducting and will continue to do so unless the voltage is reversed across the component. These are frequently used as power controllers.

TRIACs

TRIACs: TRIACs function as electronic switches, being bidirectional and therefore allowing current to be conducted across them in either direction. The devices have a similar functionality to a pair of silicone-controlled rectifiers in an inverse parallel configuration and connected together at each of the rectifier's gates.

TVS Diodes

TVS Diodes: UJT (unijunction) transistors have three terminals but only one junction. They utilize n-type semiconductors on the base and p-type on the emitter. UJT transistors were formerly used in oscillators, particularly by hobbyists. Today, they are commonly used to trigger thyristors.

Varactor Diodes

Varactor Diodes: These devices are also known as varicap diodes, variable capacitance diodes and tuning diodes. The devices are utilized as capacitors that are controlled by the voltage applied to them. Varacter diodes are commonly found in television sets, cellular phones and other devices that utilize FM transmitters or that receive FM transmissions. These devices change their capacitance as the voltage applied to them is increased or decreased.

Zener Diodes

Zener Diodes: Zener diodes are commonly used in roles where they provide a limiting factor on voltage, protection against too much voltage on a circuit or a voltage reference. These are very common components across the board in electronic devices.

https://www.rs-online.com/designspark/how-do-discrete-semico...

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Note added at 9 hrs (2021-07-29 23:23:05 GMT)
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discrete (semiconductor) device
A semiconductor device that is specified to perform an elementary electronic function and is not divisible into separate components functional in themselves.

NOTE 1 Diodes, transistors, rectifiers, thyristors, and multiple versions of these devices are examples. Other semiconductor structures having the physical complexity of integrated circuits but performing elementary electronic functions (e.g., complex Darlington transistors) are usually considered to be discrete semiconductor devices.

NOTE 2 If a semiconductor device is not considered to be an integrated circuit in both complexity and functionality, it is considered to be a discrete device.

https://www.jedec.org/standards-documents/dictionary/terms/d...

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Note added at 9 hrs (2021-07-29 23:29:56 GMT)
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ST offers a wide portfolio of automotive grade power discrete devices for reliable, robust and power-efficient automotive applications.

The portfolio includes:

Automotive MOSFETs ranging from -80 to 1000 V housed in the most common package options for increased design flexibility

Automotive IGBTs featuring a high switching frequency and short-circuit rating

Automotive ultrafast diodes intended for DC-DC converters used in numerous automotive functions as well as rectification in the secondary side of on-board-charger (OBS) solutions

Automotive SiC MOSFET the ideal high voltage power switch for vehicle electrification

650 and 1200 V automotive silicon carbide (SiC) diodes featuring the best-in-class forward voltage drop (VF) and surge capability (IFSM)

Automotive power Schottky diodes intended for DC-DC converters used in numerous automotive functions such as LED lighting , reverse battery protection and motor control

Automotive bridge rectifier diodes intended for primary bridges used in automotive battery chargers

AEC-Q101 Automotive thyristors designed for 2 to 22 kW on-board chargers in bridge or bridgeless rectifier topologies


Automotive grade clamping diodes (TVS) and filters addressing all the protection sockets in automotive applications, from infotainment, navigation, communication, audio and video to battery charging systems, smart junction boxes, relays and power-lines

https://www.st.com/en/automotive-analog-and-power/automotive...

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Note added at 9 hrs (2021-07-29 23:37:48 GMT)
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